Disordering of CdZnSe/ZnSe Strained Layer Superlattices by Ion Implantation
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概要
- 論文の詳細を見る
We report the first confirmation of disordering of CdZnSe/ZnSe strained-layer superlattices (SLSs) by ion implantation. Ne was used for the ion species. Both the as-grown sample and the sample annealed without ion implantation showed periodic depth profiles in secondary ion mass spectrometry (SIMS) analyses and several orders of well-resolved double-crystal X-ray satellite peaks due to SLS periodic structure. However, the SIMS periodic profiles and the satellite peaks completely disappeared in the Ne-implanted sample, indicating that the SLS structure was disordered by the ion-implantation and not caused by the annealing process.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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BIMBERG Dieter
Technische Universitat Berlin
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Merz James
Department Of Electrical And Computer Engineering University Of California
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Yokogawa Toshiya
Matsushita Electric Ind. Co. Ltd Semiconductor Research Center
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Luo Hon
Department of Physics, University of Notre Dame
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Furdyna Jack
Department of Physics, University of Notre Dame
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Lau Sylvanus
Department of Electrical and Computer Engineering, University of California, San Diego
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Kuttler Marc
Technische Universitat Berlin
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Luo Hon
Department Of Physics University Of Notre Dame
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Lau Sylvanus
Department Of Electrical And Computer Engineering University Of California San Diego
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Furdyna Jack
Department Of Physics University Of Notre Dame
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