Quantum-Dot Cellular Automata: Line and Majority Logic Gate
スポンサーリンク
概要
- 論文の詳細を見る
An introduction to the operation of quantum-dot cellular automata is presented, along with recent experimental results. Quantum-dot cellular automata (QCA) is a transistorless computation paradigm that addresses the issues of device density and interconnection. The basic building blocks of the QCA architecture, such as AND, OR, and NOT are presented. The experimental devices presented are QCA cells where the dots are metal islands, coupled by capacitors and tunnel junctions. A line of three two-dot cells is presented, which demonstrates that there are no metastable states in a QCA line. The final experiment presented is a QCA majority gate, a programmable AND/OR logic gate.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-12-30
著者
-
Orlov Alexei
Department Of Electrical Engineering University Of Notre Dame
-
Merz James
Department Of Electrical And Computer Engineering University Of California
-
Lent Craig
Department Of Electrical Engineering University Of Notre Dame
-
Porod Wolfgang
Department Of Electrical Engineering University Of Notre Dame
-
Bernstein Gary
Department Of Electrical Engineering University Of Notre Dame
-
Snider Gregory
Department Of Electrical Engineering University Of Notre Dame
-
Amlani Islamshah
Department Of Electrical Engineering University Of Notre Dame
-
Orlov Alexei
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A
-
Lent Craig
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A
-
Snider Gregory
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A
-
Merz James
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A
-
Porod Wolfgang
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A
-
Amlani Islamshah
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A
関連論文
- Quantum-Dot Cellular Automata: Line and Majority Logic Gate
- Low Threshold and Low Divergence Blue Vertical-Cavity Surface-Emitting Laser Diodes
- Electrically Pumped CdZnSe/ZnSe Blue-Green Vertical-Cavity Surface-Emitting Lasers
- Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
- Disordering of CdZnSe/ZnSe Strained Layer Superlattices by Ion Implantation
- Effect of Stray Charge on Quantum Cellular Automata
- Si-Containing Recessed Ohmic Contacts and 210GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
- InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz
- Experimental Test of Landauer's Principle at the Sub-k_{\text{B}} T Level
- Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz
- Quantum-Dot Cellular Automata: Line and Majority Logic Gate
- InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_T/f_ of 260/220GHz