Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

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概要

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• We report on 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency (f_{\text{T}}) of 400 GHz. Although the high drain-induced barrier lowering (DIBL) value is indicative of significant short-channel effects, more than seven orders of magnitude in the current on/off ratio was observed. The high f_{\text{T}} is a result of minimized parasitic effects and at the expense of a low power gain cutoff frequency (f_{\text{MAX}}). The gate length dependence and temperature dependence of f_{\text{T}} were also measured.

• 2013-08-25

著者

• Snider Gregory

  Department Of Electrical Engineering University Of Notre Dame

• Guo Jia

  Department Of Electronics Engineering Shanghai Jiao Tong University

• WANG Ronghua

  Department of Electrical Engineering, University of Notre Dame

• LI Guowang

  Department of Electrical Engineering, University of Notre Dame

• HU Zongyang

  Department of Electrical Engineering, University of Notre Dame

• GAO Xiang

  IQE RF LLC

• GUO Shiping

  IQE RF LLC

• JENA Debdeep

  Department of Electrical Engineering, University of Notre Dame

• Fay Patrick

  Department Of Electrical Engineering University Of Notre Dame

• Xing Huili

  Department Of Electrical Engineering University Of Notre Dame

• Gao Xiang

  IQE RF LLC, Somerset, NJ 08873, U.S.A.

• Sensale-Rodriguez Berardi

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• Yue Yuanzheng

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• Faria Faiza

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• Song Bo

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• Kosel Thomas

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• Guo Jia

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• FARIA Faiza

  Department of Electrical Engineering, University of Notre Dame

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