Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors
スポンサーリンク
概要
- 論文の詳細を見る
High electron mobility transistors (HEMTs) based on InAlN/GaN nanoribbon (NR) structures appear as a new technology which can deliver record current densities. Ultraviolet (UV) photodetectors based on ungated InAlN/GaN NR HEMT structures have a gain in the range of the 10^{5}--10^{7}, a sublinear behaviour with the excitation power and a UV/visible contrast of more than three orders of magnitude. In spite of the larger surface-to-volume ratio, sublinearities and persistent photocurrent effects are less intense in NR structures compared to planar devices, and they decrease at higher excitation power. The asymmetric NR morphology does not induce a preferential coupling of polarized light in the NR structure; since light is mostly absorbed in the GaN buffer layer and photogenerated charges are efficiently collected by the HEMT channel.
- 2013-08-25
著者
-
GAO Xiang
IQE RF LLC
-
GUO Shiping
IQE RF LLC
-
Palacios Tomás
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
-
Gonzalez-Posada Fernando
CEA-Grenoble, INAC/SP2M, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
-
Monroy Eva
CEA-Grenoble, INAC/SP2M, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
-
Palacios Tomás
Massachussets Institute of Technology, Cambridge, MA 02139, U.S.A.
-
Azize Mohamed
Massachussets Institute of Technology, Cambridge, MA 02139, U.S.A.
関連論文
- Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
- High frequency performance of graphene transistors grown by chemical vapor deposition for mixed signal applications (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Si-Containing Recessed Ohmic Contacts and 210GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
- Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors
- Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cells
- Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
- Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz
- Single GaN-Based Nanowires for Photodetection and Sensing Applications
- Single GaN-Based Nanowires for Photodetection and Sensing Applications (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
- Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors