High frequency performance of graphene transistors grown by chemical vapor deposition for mixed signal applications (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Palacios Tomás
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Hsu Allen
Massachusetts Institute of Technology, 32 Vassar Street, Cambridge, MA 02139, U.S.A.
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Wang Han
Massachusetts Institute of Technology, 32 Vassar Street, Cambridge, MA 02139, U.S.A.
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Kim Ki
Massachusetts Institute of Technology, 32 Vassar Street, Cambridge, MA 02139, U.S.A.
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Kong Jing
Massachusetts Institute of Technology, 32 Vassar Street, Cambridge, MA 02139, U.S.A.
関連論文
- High frequency performance of graphene transistors grown by chemical vapor deposition for mixed signal applications (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
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- Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors