Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
スポンサーリンク
概要
著者
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Nanishi Yasushi
Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
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Araki Tsutomu
Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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Fujishima Tatsuya
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Sakaguchi Junichi
Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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Matioli Elison
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Palacios Tomás
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Palacios Tomás
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
関連論文
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- GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility
- Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors
- Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
- Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
- Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors