Sakaguchi Junichi | Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
スポンサーリンク
概要
関連著者
-
Nanishi Yasushi
Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
-
Araki Tsutomu
Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
-
Fujishima Tatsuya
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
-
Sakaguchi Junichi
Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
-
Matioli Elison
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
-
Palacios Tomás
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
-
Nanishi Yasushi
Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
-
Palacios Tomás
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
著作論文
- Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
- Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)