Palacios Tomás | Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.

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概要

• 同名の論文著者
• Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.の論文著者

関連著者

• Palacios Tomás

  Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.

• GAO Xiang

  IQE RF LLC

• GUO Shiping

  IQE RF LLC

• Nanishi Yasushi

  Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan

• Araki Tsutomu

  Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

• Fujishima Tatsuya

  Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.

• Sakaguchi Junichi

  Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

• Matioli Elison

  Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.

• Gonzalez-Posada Fernando

  CEA-Grenoble, INAC/SP2M, 17 rue des Martyrs, 38054 Grenoble cedex 9, France

• Monroy Eva

  CEA-Grenoble, INAC/SP2M, 17 rue des Martyrs, 38054 Grenoble cedex 9, France

• Azize Mohamed

  Massachussets Institute of Technology, Cambridge, MA 02139, U.S.A.

• Nanishi Yasushi

  Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

• Palacios Tomás

  Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.

• Palacios Tomás

  Massachussets Institute of Technology, Cambridge, MA 02139, U.S.A.

• Hsu Allen

  Massachusetts Institute of Technology, 32 Vassar Street, Cambridge, MA 02139, U.S.A.

• Wang Han

  Massachusetts Institute of Technology, 32 Vassar Street, Cambridge, MA 02139, U.S.A.

• Kim Ki

  Massachusetts Institute of Technology, 32 Vassar Street, Cambridge, MA 02139, U.S.A.

• Kong Jing

  Massachusetts Institute of Technology, 32 Vassar Street, Cambridge, MA 02139, U.S.A.

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著作論文

• High frequency performance of graphene transistors grown by chemical vapor deposition for mixed signal applications (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors
• Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
• Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
• Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors

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