GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility
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概要
- 論文の詳細を見る
Enhancement-mode metal oxide semiconductor field effect transistors (MOSFETs) with trench gate structures have been developed. These MOSFETs show excellent DC characteristics with on-voltage of 5.1 V, i.e., enhancement-mode operation and extremely high channel mobilities of 133 cm2/(V s). This structure enables us to realize vertical switching devices with high breakdown voltage and highly integrated low on-resistance with the usage of excellent physical parameters of GaN. This excellent performance of these devices breaks though the realization of GaN-based power switching transistors.
- Japan Society of Applied Physicsの論文
- 2007-07-25
著者
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Takasu Hidemi
Research And Development Headquarters Rohm Co. Ltd.
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Otake Hirotaka
Research And Development Headquarters Rohm Co. Ltd.
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Ohta Hiroaki
Research And Development Headquarters Rohm Co. Ltd.
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Nanishi Yasushi
Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
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Egami Shin
Research and Development Headquarters, ROHM Co., Ltd., Kyoto 615-8585, Japan
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Otake Hirotaka
Research and Development Headquarters, ROHM Co., Ltd., Kyoto 615-8585, Japan
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Takasu Hidemi
Research and Development Headquarters, ROHM Co., Ltd., Kyoto 615-8585, Japan
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