Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

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概要

• 論文の詳細を見る

• Completely vertical trench gate metal oxide semiconductor field-effect transistors (MOSFETs) have been produced using gallium nitride (GaN) for the first time. These MOSFETs exhibited enhancement-mode operation with a threshold voltage of 3.7 V and an on-resistance of 9.3 m$\Omega$$\cdot$cm2. The channel mobility was estimated to be 131 cm2/(V$\cdot$s) when all the resistances except for that of the channel are considered. Such structures, which satisfy the key words ``vertical'', ``trench gate'', and ``MOSFET'', will enable us to fabricate practical GaN-based power switching devices.

• The Japan Society of Applied Physicsの論文
• 2008-01-25

著者

• Otake Hirotaka

  Research And Development Headquarters Rohm Co. Ltd.

• Fujishima Tatsuya

  Research And Development Headquarters Rohm Co. Ltd.

• Chikamatsu Kentaro

  Research And Development Headquarters Rohm Co. Ltd.

• Yamaguchi Atsushi

  Research And Development Headquarters Rohm Co. Ltd.

• Ohta Hiroaki

  Research And Development Headquarters Rohm Co. Ltd.

• Yamaguchi Atsushi

  Research and Development Headquarters, ROHM Co., Ltd., Kyoto 615-8585, Japan

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