Fujishima Tatsuya | Research And Development Headquarters Rohm Co. Ltd.
スポンサーリンク
概要
関連著者
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Otake Hirotaka
Research And Development Headquarters Rohm Co. Ltd.
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Fujishima Tatsuya
Research And Development Headquarters Rohm Co. Ltd.
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Chikamatsu Kentaro
Research And Development Headquarters Rohm Co. Ltd.
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Yamaguchi Atsushi
Research And Development Headquarters Rohm Co. Ltd.
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Ohta Hiroaki
Research And Development Headquarters Rohm Co. Ltd.
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OHTA Hiroaki
Materials Department, University of California
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OHTA Hiroaki
Research and Development Headquarters, ROHM Co., Ltd.
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OTAKE Hirotaka
Research and Development Headquarters, ROHM Co., Ltd.
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CHIKAMATSU Kentaro
Research and Development Headquarters, ROHM Co., Ltd.
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YAMAGUCHI Atsushi
Research and Development Headquarters, ROHM Co., Ltd.
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FUJISHIMA Tatsuya
Research and Development Headquarters, ROHM Co., Ltd.
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Ohta Hiroaki
Materials Department University Of California
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Yamaguchi Atsushi
Research and Development Headquarters, ROHM Co., Ltd., Kyoto 615-8585, Japan
著作論文
- Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates
- Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates