Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2008-01-25
著者
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OKAMOTO Kuniyoshi
Research and Development Headquarters, ROHM Co., Ltd.
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OHTA Hiroaki
Research and Development Headquarters, ROHM Co., Ltd.
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Okamoto Kuniyoshi
Research And Development Headquarters Rohm Co. Ltd.
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Kubota Masashi
Research And Development Headquarters Rohm Co. Ltd.
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TANAKA Taketoshi
Research and Development Headquarters, ROHM Co., Ltd.
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Tanaka Taketoshi
Research And Development Headquarters Rohm Co. Ltd.
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Ohta Hiroaki
Research And Development Headquarters Rohm Co. Ltd.
関連論文
- Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes
- Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals
- High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium Nitride
- Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride
- Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates
- GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility
- Pure Blue Laser Diodes Based on Nonpolar $m$-Plane Gallium Nitride with InGaN Waveguiding Layers
- Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates