Si-Containing Recessed Ohmic Contacts and 210GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
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概要
- 論文の詳細を見る
- 2011-09-25
著者
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Snider Gregory
Department Of Electrical Engineering University Of Notre Dame
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Johnson Wayne
Kopin Corporation
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WANG Ronghua
Department of Electrical Engineering, University of Notre Dame
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LI Guowang
Department of Electrical Engineering, University of Notre Dame
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VERMA Jai
Department of Electrical Engineering, University of Notre Dame
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ZIMMERMANN Tom
Department of Electrical Engineering, University of Notre Dame
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HU Zongyang
Department of Electrical Engineering, University of Notre Dame
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LABOUTIN Oleg
Kopin Corporation
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CAO Yu
Kopin Corporation
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GAO Xiang
IQE RF LLC
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GUO Shiping
IQE RF LLC
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FAY Patrick
Department of Electrical Engineering, University of Notre Dame
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JENA Debdeep
Department of Electrical Engineering, University of Notre Dame
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XING Huili
Department of Electrical Engineering, University of Notre Dame
関連論文
- Quantum-Dot Cellular Automata: Line and Majority Logic Gate
- Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
- Si-Containing Recessed Ohmic Contacts and 210GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
- InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz
- Experimental Test of Landauer's Principle at the Sub-k_{\text{B}} T Level
- Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors
- Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz
- Quantum-Dot Cellular Automata: Line and Majority Logic Gate
- Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors
- InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_T/f_ of 260/220GHz