InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz
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概要
- 論文の詳細を見る
Depletion-mode high-electron-mobility transistors (HEMTs) with an 11 nm quaternary In0.13Al0.83Ga0.04N barrier and a 5 nm In0.05Ga0.95N channel on SiC substrates have been fabricated. The as-processed HEMT structure features a channel electron density of 2.08\times 10^{13} cm-2 and a mobility of 1140 cm2 V-1 s-1. A device with a 50-nm-long T-shaped gate shows a maximum output current density of 2.0 A/mm, a peak extrinsic DC transconductance of 690 mS/mm, and cut-off frequencies f_{\text{T}}/f_{\text{max}} of 260/220 GHz at the same bias, representing a record high \sqrt{f_{\text{T}}\cdot f_{\text{max}}} of 239 GHz for InGaN channel HEMTs.
- 2013-01-25
著者
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Snider Gregory
Department Of Electrical Engineering University Of Notre Dame
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Guo Jia
Department Of Electronics Engineering Shanghai Jiao Tong University
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Johnson Wayne
Kopin Corporation
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WANG Ronghua
Department of Electrical Engineering, University of Notre Dame
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LI Guowang
Department of Electrical Engineering, University of Notre Dame
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HU Zongyang
Department of Electrical Engineering, University of Notre Dame
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LABOUTIN Oleg
Kopin Corporation
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CAO Yu
Kopin Corporation
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JENA Debdeep
Department of Electrical Engineering, University of Notre Dame
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Fay Patrick
Department Of Electrical Engineering University Of Notre Dame
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Verma Jai
Department Of Electrical Engineering University Of Notre Dame
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Xing Huili
Department Of Electrical Engineering University Of Notre Dame
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Johnson Wayne
Kopin Corporation, Taunton, MA 02780, U.S.A.
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Jena Debdeep
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Laboutin Oleg
Kopin Corporation, Taunton, MA 02780, U.S.A.
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Li Guowang
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Yue Yuanzheng
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Faria Faiza
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Karbasian Golnaz
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Guo Jia
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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FARIA Faiza
Department of Electrical Engineering, University of Notre Dame
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