Johnson Wayne | Kopin Corporation, Taunton, MA 02780, U.S.A.
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概要
関連著者
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Snider Gregory
Department Of Electrical Engineering University Of Notre Dame
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Johnson Wayne
Kopin Corporation
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WANG Ronghua
Department of Electrical Engineering, University of Notre Dame
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LI Guowang
Department of Electrical Engineering, University of Notre Dame
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HU Zongyang
Department of Electrical Engineering, University of Notre Dame
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LABOUTIN Oleg
Kopin Corporation
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CAO Yu
Kopin Corporation
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JENA Debdeep
Department of Electrical Engineering, University of Notre Dame
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Fay Patrick
Department Of Electrical Engineering University Of Notre Dame
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Verma Jai
Department Of Electrical Engineering University Of Notre Dame
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Xing Huili
Department Of Electrical Engineering University Of Notre Dame
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Johnson Wayne
Kopin Corporation, Taunton, MA 02780, U.S.A.
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Jena Debdeep
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Laboutin Oleg
Kopin Corporation, Taunton, MA 02780, U.S.A.
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Li Guowang
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Guo Jia
Department Of Electronics Engineering Shanghai Jiao Tong University
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GAO Xiang
IQE RF LLC
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GUO Shiping
IQE RF LLC
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Zimmermann Tom
Department Of Electrical Engineering University Of Notre Dame
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Gao Xiang
IQE RF LLC, Somerset, NJ 08873, U.S.A.
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Zimmermann Tom
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Guo Shiping
IQE RF LLC, Somerset, NJ 08873, U.S.A.
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Cao Yu
Kopin Corporation, Taunton, MA 02780, U.S.A.
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Wang Ronghua
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Yue Yuanzheng
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Faria Faiza
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Karbasian Golnaz
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Guo Jia
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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FARIA Faiza
Department of Electrical Engineering, University of Notre Dame
著作論文
- Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
- InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz