Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors

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概要

• 論文の詳細を見る

• The effects of recess etch in alloyed ohmic contacts have been studied on InAl(Ga)N/AlN/GaN high-electron-mobility transistors (HEMTs) using a Si-containing ohmic metal stack. The optimized contact resistance is as low as 0.23 $\Omega$ mm. With decent ohmic contacts, an In_0.13Al_0.83Ga_0.04N barrier HEMT with a 66-nm long gate and dielectric-free passivation followed by a 5 nm Al₂O₃ deposition, shows a maximum drain current density $I_{\text{d,max}}$ of 2.3 A/mm, a peak extrinsic transconductance $g_{\text{m,ext}}$ of 560 mS/mm and a current gain cut-off frequency $f_{\text{T}}$ of 210 GHz, which are among the highest reported values in quaternary InAlGaN/AlN/GaN HEMTs.

• 2011-09-25

著者

• Snider Gregory

  Department Of Electrical Engineering University Of Notre Dame

• Johnson Wayne

  Kopin Corporation

• WANG Ronghua

  Department of Electrical Engineering, University of Notre Dame

• LI Guowang

  Department of Electrical Engineering, University of Notre Dame

• HU Zongyang

  Department of Electrical Engineering, University of Notre Dame

• LABOUTIN Oleg

  Kopin Corporation

• CAO Yu

  Kopin Corporation

• GAO Xiang

  IQE RF LLC

• GUO Shiping

  IQE RF LLC

• JENA Debdeep

  Department of Electrical Engineering, University of Notre Dame

• Fay Patrick

  Department Of Electrical Engineering University Of Notre Dame

• Zimmermann Tom

  Department Of Electrical Engineering University Of Notre Dame

• Verma Jai

  Department Of Electrical Engineering University Of Notre Dame

• Xing Huili

  Department Of Electrical Engineering University Of Notre Dame

• Johnson Wayne

  Kopin Corporation, Taunton, MA 02780, U.S.A.

• Gao Xiang

  IQE RF LLC, Somerset, NJ 08873, U.S.A.

• Zimmermann Tom

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• Guo Shiping

  IQE RF LLC, Somerset, NJ 08873, U.S.A.

• Cao Yu

  Kopin Corporation, Taunton, MA 02780, U.S.A.

• Jena Debdeep

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• Wang Ronghua

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• Laboutin Oleg

  Kopin Corporation, Taunton, MA 02780, U.S.A.

• Li Guowang

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

関連論文

• Quantum-Dot Cellular Automata: Line and Majority Logic Gate
• Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
• Si-Containing Recessed Ohmic Contacts and 210GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
• InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz
• Experimental Test of Landauer's Principle at the Sub-k_{\text{B}} T Level
• Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors
• Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz
• Quantum-Dot Cellular Automata: Line and Majority Logic Gate
• Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors
• InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_T/f_ of 260/220GHz

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