Quantum-Dot Cellular Automata: Line and Majority Logic Gate

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Quantum-Dot Cellular Automata: Line and Majority Logic Gate
Low Threshold and Low Divergence Blue Vertical-Cavity Surface-Emitting Laser Diodes
Electrically Pumped CdZnSe/ZnSe Blue-Green Vertical-Cavity Surface-Emitting Lasers
Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
Disordering of CdZnSe/ZnSe Strained Layer Superlattices by Ion Implantation
Effect of Stray Charge on Quantum Cellular Automata
Si-Containing Recessed Ohmic Contacts and 210GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz
Experimental Test of Landauer's Principle at the Sub-k_{\text{B}} T Level
Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz
Quantum-Dot Cellular Automata: Line and Majority Logic Gate
InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_T/f_ of 260/220GHz

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