Karbasian Golnaz | Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

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概要

• Karbasian Golnazの詳細を見る
• 同名の論文著者
• Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.の論文著者

関連著者

• Snider Gregory

  Department Of Electrical Engineering University Of Notre Dame

• Johnson Wayne

  Kopin Corporation

• WANG Ronghua

  Department of Electrical Engineering, University of Notre Dame

• LI Guowang

  Department of Electrical Engineering, University of Notre Dame

• HU Zongyang

  Department of Electrical Engineering, University of Notre Dame

• LABOUTIN Oleg

  Kopin Corporation

• CAO Yu

  Kopin Corporation

• JENA Debdeep

  Department of Electrical Engineering, University of Notre Dame

• Fay Patrick

  Department Of Electrical Engineering University Of Notre Dame

• Verma Jai

  Department Of Electrical Engineering University Of Notre Dame

• Xing Huili

  Department Of Electrical Engineering University Of Notre Dame

• Yue Yuanzheng

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• Faria Faiza

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• Karbasian Golnaz

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• Guo Jia

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• FARIA Faiza

  Department of Electrical Engineering, University of Notre Dame

• Guo Jia

  Department Of Electronics Engineering Shanghai Jiao Tong University

• XING Huili

  Department of Electrical Engineering, University of Notre Dame

• Johnson Wayne

  Kopin Corporation, Taunton, MA 02780, U.S.A.

• Jena Debdeep

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• Laboutin Oleg

  Kopin Corporation, Taunton, MA 02780, U.S.A.

• Li Guowang

  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.

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著作論文

• InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz
• InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_T/f_ of 260/220GHz

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