XING Huili | Department of Electrical Engineering, University of Notre Dame
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概要
関連著者
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Snider Gregory
Department Of Electrical Engineering University Of Notre Dame
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Johnson Wayne
Kopin Corporation
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WANG Ronghua
Department of Electrical Engineering, University of Notre Dame
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LI Guowang
Department of Electrical Engineering, University of Notre Dame
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HU Zongyang
Department of Electrical Engineering, University of Notre Dame
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LABOUTIN Oleg
Kopin Corporation
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CAO Yu
Kopin Corporation
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JENA Debdeep
Department of Electrical Engineering, University of Notre Dame
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XING Huili
Department of Electrical Engineering, University of Notre Dame
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VERMA Jai
Department of Electrical Engineering, University of Notre Dame
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ZIMMERMANN Tom
Department of Electrical Engineering, University of Notre Dame
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GAO Xiang
IQE RF LLC
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GUO Shiping
IQE RF LLC
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FAY Patrick
Department of Electrical Engineering, University of Notre Dame
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Fay Patrick
Department Of Electrical Engineering University Of Notre Dame
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Verma Jai
Department Of Electrical Engineering University Of Notre Dame
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Xing Huili
Department Of Electrical Engineering University Of Notre Dame
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Yue Yuanzheng
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Faria Faiza
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Karbasian Golnaz
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Guo Jia
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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FARIA Faiza
Department of Electrical Engineering, University of Notre Dame
著作論文
- Si-Containing Recessed Ohmic Contacts and 210GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
- InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_T/f_ of 260/220GHz