Single GaN-Based Nanowires for Photodetection and Sensing Applications

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概要

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• We present a study of the structural properties of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We combine transmission electron microscopy measurements with theoretical calculations of the strain distribution and band diagram in order to gain understanding of the potential distribution in these nanostructures. The effects of surface states and of the formation of a core--shell heterostructure are discussed. The structural properties are correlated with the performance of GaN-based nanowire photodetectors and sensors. In particular, we discuss a sensor design where the insertion of an AlN barrier in a GaN nanowire is proposed as a material engineering solution to inhibit the electron transport through the core, confining the current close to the nanowire sidewalls.

• The Japan Society of Applied Physicsの論文
• 2013-11-25

著者

• den Hertog

  Institut Néel-CNRS, 25 rue des Martyrs, 38042 Grenoble cedex 9, France

• Gonzalez-Posada Fernando

  CEA-Grenoble, INAC/SP2M, 17 rue des Martyrs, 38054 Grenoble cedex 9, France

• Songmuang Rudeesun

  Institut Néel-CNRS, 25 rue des Martyrs, 38042 Grenoble cedex 9, France

• Monroy Eva

  CEA-Grenoble, INAC/SP2M, 17 rue des Martyrs, 38054 Grenoble cedex 9, France

• Songmuang Rudeesun

  Institut Néel-CNRS, 25 rue des Martyrs, 38042 Grenoble cedex 9, France

関連論文

• Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors
• Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cells
• Single GaN-Based Nanowires for Photodetection and Sensing Applications
• Single GaN-Based Nanowires for Photodetection and Sensing Applications (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
• Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors

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