Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cells

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We report on the fabrication and photovoltaic characterization of In<inf>0.12</inf>Ga<inf>0.88</inf>N/GaN multi-quantum-well (MQW) solar cells grown by metal--organic vapor phase epitaxy on (0001) sapphire substrates. Increasing the number of MQWs in the active region from 5 to 30 improves a factor of 10 the peak external quantum efficiency of the device at the price of a slight reduction and increase of the shunt and series resistance, respectively. Solar cells with 30 MQWs exhibit an external quantum efficiency of 38% at 380 nm, an open circuit voltage of 2.0 V, a short circuit current density of 0.23 mA/cm<sup>2</sup>and a fill factor of 59% under 1 sun of AM1.5G-equivalent solar illumination. Solar cells with the grid spacing of the top p-contact varying from 100 to 200 μm present the same device performance in terms of spectral response and conversion efficiency.
2013-08-25