On the Origin of the Unexpected Annealing Behavior of GaInNAs Quantum Wells
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概要
- 論文の詳細を見る
Studies of the annealing of GaInNAs quantum wells under argon or hydrogen atmosphere revealed a significant dependency of the annealing behavior on the growth temperature. Structural investigation by means of transmission electron microscopy reveals the formation of vacancy type dislocation loops after argon annealing only for quantum wells grown at low temperature. This was not observed for hydrogen annealing. The formation of these loops leads to enhanced nonradiative recombination reducing the luminescence efficiency. In contrast, samples grown at high temperatures show improved luminescence efficiency upon both annealing atmospheres. This is attributed to the growth-induced formation of different kinds of defects.
- Japan Society of Applied Physicsの論文
- 2007-07-25
著者
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HOFFMANN Axel
Institut fur Festkorperphysik der TU Berlin
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Albrecht Martin
Institute of Crystal Growth, Max-Born-Str. 2, D-12489 Berlin, Germany
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Dworzak Matthias
Institute of Solid State Physics, Technical University Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
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Hildebrant Radowan
Institute of Solid State Physics, Technical University Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
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Geelhaar Lutz
Qimonda (formerly Infineon Technologies), D-81730 Munich, Germany
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Galluppi Massimo
Qimonda (formerly Infineon Technologies), D-81730 Munich, Germany
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Riechert Henning
Qimonda (formerly Infineon Technologies), D-81730 Munich, Germany
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Remmele Thilo
Institute of Crystal Growth, Max-Born-Str. 2, D-12489 Berlin, Germany
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Hoffmann Axel
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
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Hoffmann Axel
Institute of Solid State Physics, Technical University Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
関連論文
- Strain Modification of GaN in AlGaN/GaN Epitaxial Films
- Local Stress Analysis of Epitaxial Laterally-Overgrown GaN
- Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates
- On the Origin of the Unexpected Annealing Behavior of GaInNAs Quantum Wells
- Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates