Dadgar Armin | Institut Fur Festkorperphysik Technische Universitat Berlin
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概要
関連著者
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Dadgar Armin
Otto-von-guericke-university Magdeburg Faculty Of Natural Sciences Institut Of Experimental Physics
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Dadgar Armin
Institut Fur Festkorperphysik Technische Universitat Berlin
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Dadgar Armin
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany
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Iqbal Mohd
Semiconductor Physics Laboratory Department Of Physics Quaid-i-azam University
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BIMBERG D.
Institut fur Festkorperphysik, Technische Universitat Berlin
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YAMAGUCHI Masafumi
Toyota Technological Institute
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Diez Annette
Otto-von-guericke-university Magdeburg Faculty Of Natural Sciences Institut Of Experimental Physics
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Qurashi Umar
Semiconductor Physics Laboratory Department Of Physics Quaid-i-azam University
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Khan A
Toyota Technological Inst. Nagoya Jpn
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Bimberg D
Institut Fur Festkorperphysik Technische Universitat Berlin
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Bimberg D.
Institut Fur Festkorperphysik Technische Universitat Berlin
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Kosogov A
Max-planck-institut Fur Mikrostrukturphysik
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Krost A
Otto-von-guericke-university Magdeburg Faculty Of Natural Sciences Institut Of Experimental Physics
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Krost Alois
Institut Fur Festkorperphysik Tu-berlin
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KHAN Aurangzeb
Semiconductor Physics Laboratory, Department of Physics, Quaid-i-Azam University
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ZAFAR Nasim
Semiconductor Physics Laboratory, Department of Physics, Quaid-i-Azam University
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DADGAR Armin
Institut fur Festkorperphysik, Technische Universitat Berlin
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Zafar Nasim
Semiconductor Physics Laboratory Department Of Physics Quaid-i-azam University
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Khan Aurangzeb
Semiconductor Physics Laboratory Department Of Physics Quaid-i-azam University:toyota Technological
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BLASING Jurgen
Institut fur Experimentelle Physik, Otto-von-Guericke Universitat
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Bimberg D
Technische Univ. Berlin Berlin Deu
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Blaesing J
Otto-von-guericke-university Magdeburg Faculty Of Natural Sciences Institut Of Experimental Physics
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DIEZ Annette
Institut fur Experimentelle Physik, Otto-von-Guericke Universitat Magdeburg
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ALAM Assadullah
AIXTRON AG
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HEUKEN Michael
AIXTRON AG
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Diez Anoette
Institut fur Experimentelle Physik, Otto-von-Guericke Universitat Magdeburg
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Krost Alois
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany
著作論文
- Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
- Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si(111) Exceeding 1 μm in Thickness