Atomic Arrangement at the AlN/Si(110) Interface

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概要

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• GaN has been grown on Si(110) substrates by metalorganic vapor phase epitaxy using a low-temperature AlN nucleation layer. The atomic arrangement at the AlN/substrate interface has been investigated by high-resolution transmission electron microscopy. Lattice images of the AlN/Si interface taken along the $\langle 11\bar{2}0\rangle_{\text{AlN}}\varparallel\langle 1\bar{1}0\rangle_{\text{Si}}$ and $\langle 1\bar{1}00\rangle_{\text{AlN}}\varparallel\langle 001\rangle_{\text{Si}}$ projections show an abrupt crystalline interface. A highly coherent epitaxial relationship between $(1\bar{1}00)_{\text{AlN}}$ and $(001)_{\text{Si}}$ planes is observed. The atomic bonding configuration at the AlN/Si interface is analyzed taking into consideration the chemical coordination, lattice mismatch, and net charge balance. A structure model of the bonding at the interface is presented.

• Japan Society of Applied Physicsの論文
• 2008-06-25

著者

• Ponce Fernando

  Arizona State Univ. Az Usa

• Ponce Fernando

  Department Of Physics Arizona State University

• Krost Alois

  Otto-von-guericke Universitat-magdeburg Institut Fur Experimentelle Physik Fakultat Fur Naturwissens

• Ponce Fernando

  Department Of Physics And Astronomy Arizona State University

• Dadgar Armin

  Otto-von-guericke-university Magdeburg Faculty Of Natural Sciences Institut Of Experimental Physics

• Dadgar Armin

  Otto-von-guericke Universitat-magdeburg Institut Fur Experimentelle Physik Fakultat Fur Naturwissens

• Contreras Oscar

  Universidad Nacional Autónoma de México, Apdo. Postal 356, C.P. 22800, Ensenada, B. C., México

• Ruiz-Zepeda Francisco

  Centro de Investigación Científica y de Educación Superior de Ensenada, Km. 107 Carretera Tijuana-En

• Contreras Oscar

  Universidad Nacional Autonoma De Mexico

• Ruiz-zepeda Francisco

  Centro De Investigacion Cientifica Y De Educacion Superior De Ensenada

関連論文

• Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN
• Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
• Effect of Growth Temperature on the Electron-Blocking Performance of InAlN Layers in Green Emitting Diodes
• Evidence of Two-Dimensional Hole Gas in p-Type AlGaN/AlN/GaN Heterostructures
• Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping
• Atomic Arrangement at the AlN/Si(110) Interface
• Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
• Metal Organic Vapor Phase Epitaxy of ZnO on GaN/Si(111) Using Tertiary-Butanol as O-Precursor
• Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si(111) Exceeding 1 μm in Thickness
• Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
• Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
• Correlated Structural, Electronic, and Optical Properties of AlN/GaN Multiple Quantum Disks in GaN Nanowires
• Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire

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