Correlated Structural, Electronic, and Optical Properties of AlN/GaN Multiple Quantum Disks in GaN Nanowires
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概要
- 論文の詳細を見る
- 2012-02-25
著者
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Ponce Fernando
Department Of Physics And Astronomy Arizona State University
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Fischer Alec
Arizona State Univ. Az Usa
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Fischer Alec
Department Of Physics Arizona State University
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Sun Kewei
Department Of Physics Arizona State University
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SONGMUANG Rudeesun
CEA-CNRS Group Nanophysics and Semiconductors, Institute Neel
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MONROY Eva
CEA-CNRS Group "Nanophysique et Semiconducteurs", Institut Neel, CNRS and INAC/SP2M/CEA
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Monroy Eva
Cea-cnrs Group "nanophysique Et Semiconducteurs" Institut Neel Cnrs And Inac/sp2m/cea
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Songmuang Rudeesun
Cea-cnrs Group "nanophysique Et Semiconducteurs" Institut Neel Cnrs And Inac/sp2m/cea
関連論文
- Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN
- Effect of Growth Temperature on the Electron-Blocking Performance of InAlN Layers in Green Emitting Diodes
- Atomic Arrangement at the AlN/Si(110) Interface
- Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
- Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
- Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
- Correlated Structural, Electronic, and Optical Properties of AlN/GaN Multiple Quantum Disks in GaN Nanowires
- Imaging and Analysis by Transmission Electron Microscopy of the Spontaneous Formation of Al-Rich Shell Structure in Al_xGa_N/GaN Nanowires
- Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire