Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN

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概要

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• We have found that, in the absence of threading dislocations in InxGa1-xN/GaN heterostructures, coherent generation of misfit dislocations occurs for $x>0.11$ in ${\sim}100$-nm-thick epilayers. We focus this report on In0.17Ga0.83N grown on a low-defect-density GaN free-standing substrate (with 1.9% lattice mismatch). A diffraction contrast analysis carried out in the transmission electron microscope showed straight line defects with Burgers vectors 2/3 $\langle 11\bar{2}0 \rangle$ (i.e., $2\mathbf{a}$, where $\mathbf{a}$ is the hexagonal plane lattice parameter), which extended many micrometers approximately along $\langle 1\bar{1}00 \rangle$ directions and with an average lateral spacing of 90 nm. Although these defects were complex and mostly sessile, evidence was found that they can dissociate into glissile misfit dislocations with Burgers vectors of 1/3 $\langle 11\bar{2}0 \rangle$. It is proposed that the defects are generated by a punch-out mechanism involving slip on inclined prismatic planes. The properties of these defects and their role in relieving misfit strains are discussed.

• 2006-06-25

著者

• Mei Jin

  Department Of Physics And Astronomy Arizona State University

• Ponce Fernando

  Department Of Physics And Astronomy Arizona State University

• Mukai Takashi

  Nichia Chemical Industries Inc.

• Cherns David

  H. H. Wills Physics Laboratory University Of Bristol

• Omiya Hiromasa

  Department Of Physics And Astronomy Arizona State University

• Srinivasan Sridhar

  Department Of Physics And Astronomy Arizona State University

• Liu Rong

  Department Of Physics And Astronomy Arizona State University

• Mukai Takashi

  Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Narukawa Yukio

  Nichia Chemical Industries Ltd., Anan, Tokusima 774-0044, Japan

• Cherns David

  H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.

• Omiya Hiromasa

  Department of Physics and Astronomy, Arizona State University, Tempe, Arizona, U.S.A.

• Narukawa Yukio

  Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Liu Rong

  Department of Physics and Astronomy, Arizona State University, Tempe, Arizona, U.S.A.

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• Hydrogen Dissociation from Mg-doped GaN
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• Equation for Internal Quantum Efficiency and Its Temperature Dependence of Luminescence, and Application to InxGa1-xN/GaN Multiple Quantum Wells
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• Conductance Frequency Spectroscopy Study of a Low Resistive p-Type GaN Layer Highly Doped with Mg
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