Effects of Capacitively Coupled Radio Frequency Krypton and Argon Plasmas on Gallium Nitride Etching Damage
スポンサーリンク
概要
- 論文の詳細を見る
GaN etching damage characteristics by capacitively coupled radio frequency Kr and Ar plasmas have been found to differ significantly, on the basis of experimental and simulation results. The morphology of a GaN surface etched by Kr plasma is as smooth as that of the as-grown surface, and is independent of gas pressure and etching time. The agreement between the experimental and simulated etching depths for the Kr plasma, which are lower than those for the Ar plasma, indicates a significant contribution to the GaN damage of the physical etching effect. In contrast, Ar plasma etching produces a rough surface, which is dependent on gas pressure and etching time, and appears to be due to a chemical effect. The difference in the GaN surface morphologies etched by the Kr and Ar plasmas may be attributed to the different depths etched for these two plasmas. Moreover, the simulation shows that, for the Kr plasma, Ga is preferentially etched from GaN, whereas the preferential etching of N occurs for the Ar plasma. The difference in preferential etching between the Kr and Ar plasmas may be related to the difference between the GaN surface morphologies etched by these two plasmas.
- 2009-08-25
著者
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Mukai Takashi
Nichia Chemical Industries Inc.
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Inaoka Takeshi
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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Tominaga Kikuo
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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Kawakami Retsuo
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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