Narukawa Yukio | Nichia Chemical Industries Ltd., Anan, Tokusima 774-0044, Japan
スポンサーリンク
概要
関連著者
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Mukai Takashi
Nichia Chemical Industries Inc.
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Narukawa Yukio
Nichia Chemical Industries Ltd., Anan, Tokusima 774-0044, Japan
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Mei Jin
Department Of Physics And Astronomy Arizona State University
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Ponce Fernando
Department Of Physics And Astronomy Arizona State University
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Cherns David
H. H. Wills Physics Laboratory University Of Bristol
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Omiya Hiromasa
Department Of Physics And Astronomy Arizona State University
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Srinivasan Sridhar
Department Of Physics And Astronomy Arizona State University
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Liu Rong
Department Of Physics And Astronomy Arizona State University
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Mukai Takashi
Nichia Corporation
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Narukawa Yukio
Nichia Corporation
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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LIU Rong
Department of Physics and Astronomy, Arizona State University
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SRINIVASAN Sridhar
Department of Physics and Astronomy, Arizona State University
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OMIYA Hiromasa
Department of Physics and Astronomy, Arizona State University
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CHERNS David
H. H. Wills Physics Laboratory, University of Bristol
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Mukai Takashi
Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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Mukai Takashi
Nichia Chemical Industries Ltd., Anan, Tokusima 774-0044, Japan
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Sasaki Akio
Osaka Electro-Communication University, Neyagawa, Osaka 572-8530, Japan
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Shibakawa Shin-ichiro
Osaka Electro-Communication University, Neyagawa, Osaka 572-8530, Japan
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Nishizuka Kohji
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Cherns David
H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.
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Omiya Hiromasa
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona, U.S.A.
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Narukawa Yukio
Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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Liu Rong
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona, U.S.A.
著作論文
- Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
- Equation for Internal Quantum Efficiency and Its Temperature Dependence of Luminescence, and Application to InxGa1-xN/GaN Multiple Quantum Wells
- Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN