Effect of Growth Temperature on the Electron-Blocking Performance of InAlN Layers in Green Emitting Diodes

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概要

著者

Ponce Fernando
Department Of Physics Arizona State University
Ponce Fernando
Department Of Physics And Astronomy Arizona State University
Fischer Alec
Arizona State Univ. Az Usa
FISCHER Alec
Department of Physics, Arizona State University
SUN Kewei
Department of Physics, Arizona State University
Kim Seong-soo
Center For Compound Semiconductors And School Of Electrical And Computer Engineering Georgia Institu
JUDAY Reid
Department of Physics, Arizona State University
RYOU Jae-Hyun
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Instit
KIM Hee
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Instit
CHOI Suk
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Instit
DUPUIS Russell
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Instit
Kim Hee
Center For Compound Semiconductors And School Of Electrical And Computer Engineering Georgia Institu
Dupuis Russell
Center For Compound Semiconductors And School Of Electrical And Computer Engineering Georgia Institu
Juday Reid
Department Of Physics Arizona State University
Fischer Alec
Department Of Physics Arizona State University
Choi Suk
Center For Compound Semiconductors And School Of Electrical And Computer Engineering Georgia Institu
Sun Kewei
Department Of Physics Arizona State University
Ryou Jae-hyun
Center For Compound Semiconductors And School Of Electrical And Computer Engineering Georgia Institu

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