Evidence of Two-Dimensional Hole Gas in p-Type AlGaN/AlN/GaN Heterostructures

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2009-12-25

著者

• Ponce Fernando

  Department Of Physics Arizona State University

• Wu Zhihao

  Department Of Physics Arizona State University

• SUN Kewei

  Department of Physics, Arizona State University

• WEI Qiyuan

  Department of Physics, Arizona State University

• Scholz Ferdinand

  Institute Of Optoelectronics Ulm University

• HERTKORN Joaquim

  Institute of Optoelectronics, Ulm University

関連論文

• Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN
• Effect of Growth Temperature on the Electron-Blocking Performance of InAlN Layers in Green Emitting Diodes
• Evidence of Two-Dimensional Hole Gas in p-Type AlGaN/AlN/GaN Heterostructures
• Atomic Arrangement at the AlN/Si(110) Interface
• Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
• AlGaN-Based 355nm UV Light-Emitting Diodes with High Power Efficiency

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