Tomita Motohiro | School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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概要
- Tomita Motohiroの詳細を見る
- 同名の論文著者
- School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japanの論文著者
関連著者
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Kosemura Daisuke
School Of Science And Engineering Meiji University
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Ogura Atsushi
School Of Science And Engineering Meiji University
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Tomita Motohiro
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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USUDA Koji
Collaborative Research Team Green Nanoelectronics Center, AIST
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Tezuka Tsutomu
Collaborative Research Team Green Nanoelectronics Center, AIST, Tsukuba, Ibaraki 305-8569, Japan
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Akamatsu Hiroaki
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Takei Munehisa
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Nagata Kohki
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Usuda Koji
Collaborative Research Team Green Nanoelectronics Center, AIST, Tsukuba, Ibaraki 305-8569, Japan
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Ogura Atsushi
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Tomita Motohiro
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Nagasaka Masaya
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Usuda Koji
Green Nanoelectronics Collaborative Research Center, AIST, Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation
- Evaluation of Anisotropic Strain Relaxation in Strained Silicon-on-Insulator Nanostructure by Oil-Immersion Raman Spectroscopy (Special Issue : Solid State Devices and Materials (1))
- Tensor Evaluation of Anisotropic Stress Relaxation in Mesa-Shaped SiGe Layer on Si Substrate by Electron Back-Scattering Pattern Measurement: Comparison between Raman Measurement and Finite Element Method Simulation
- Measurement of Anisotropic Biaxial Stresses in Si
- Measurement of Anisotropic Biaxial Stresses in Si₁₋xGe[x]/Si Mesa Structures by Oil-Immersion Raman Spectroscopy (Special Issue : Solid State Devices and Materials)