Sharp Transmission Coefficient in GaAs/AlAs Resonant Tunneling Diodes with (411) A Superflat Interfaces Grown by Molecular Beam Epitaxy
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概要
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In order to understand the improved I-V characteristics of GaAs/AlAs resonant tunneling diodes (RTDs) with (411) A superflat interfaces, transmission coefficient (T^*T) was deduced from the second derivative (d^2I/dV^2) of the observed IV curves. The peak width (full-width at half maximum, FWHM) of the transmission coefficient was found to be 8.6 men, which was 18% smaller than that (10.5 meV) of the RTD simultaneously grown on a conventional (100) GaAs substrate. Photoluminescence (PL) measurements for the GaAs/AlAs double barrier structures of the RTDs themselves also showed a narrower linewidth for the (411)A sample (FWHM = 7.2 meV) than for the (100) sample (10.6 meV). This result suggests that electrons tunneling through the barriers are as sensitive to the interface roughness as excitons in the quantum well.
- 社団法人応用物理学会の論文
- 1999-09-15
著者
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Shimomura S
Graduate School Of Science And Engineering Ehime University
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Shimomura Satoshi
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Hiyamizu S
Osaka Univ. Osaka Jpn
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HIYAMIZU Satoshi
Department of Materials Physics,Faculty of Engineering Science,Osaka University
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Shinohara Keisuke
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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Shinohara K
National Institute Of Info. & Com. Tech.
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SHINOHARA Keisuke
Department of Cardiovascular Medicine, Kyushu University Graduate School of Medical Sciences
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Shinohara Keisuke
Department of Cardiovascular Medicine, Kyushu University Graduate School of Medical Science
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