Relation between Stress-Induced Leakage Current and Dielectric Breakdown in SiN-Based Antifuses
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-03-15
著者
-
Yasuda Hiroaki
Semiconductor Device Engineering Laboratory Toshiba Corp.
-
Yoshii Ichiro
Semiconductor Device Engineering Laboratory Toshiba Corp.
-
Yoshii Ichiro
Semiconductor Device Development Center Toshiba Corporation
-
Ikeda Naoki
Toshiba Microelectronics Corp.
-
Hama Kaoru
Toshiba Microelectronics Corp.
-
Takagi Mariko
Semiconductor Device Engineering Laboratory, Toshiba Corp.
-
Takagi Mariko
Semiconductor Device Engineering Laboratory Toshiba Corp.
-
Takagi Mariko
Semiconductor Device Development Center Toshiba Corporation
関連論文
- Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy
- Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth on Si(111)(1×1) -As and As-Desorbed Si(111)(1×1) Surfaces
- Relation between Stress-Induced Leakage Current and Dielectric Breakdown in SiN-Based Antifuses
- ESR Study of MOSFET Characteristics Degradation Mechanism by Water in Intermetal Oxide (Special Issue on LSI Failure Analysis)