ESR Study of MOSFET Characteristics Degradation Mechanism by Water in Intermetal Oxide (Special Issue on LSI Failure Analysis)

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概要

• 論文の詳細を見る

• When intermetal oxide film which contains much water is deposited on MOSFET, degradation of hot carrier characteristics is enhanced. This mechanism is considered to be as follows. During the annealing process water is desorbed from the intermetal oxide. The desorbed water reaches the MOSFET and eventually hydrogens terminate silicon dangling bonds in the gate oxide. This paper describes a new approach which uses ESR to analyze this mechanism. The ESR measurement of number of the silicon dangling bonds in undoped polysilicon lying under the intermetal oxide shows that water diffuses from intermetal oxide to MOSFET during the annealing process. The water diffusion is blocked by introduction between the polysilicon and the intermetal oxides of P-SiN layer or CVD SiO_2 damaged by implantation.

• 社団法人電子情報通信学会の論文
• 1994-04-25

著者

• Yoshii Ichiro

  Semiconductor Device Engineering Laboratory Toshiba Corp.

• Yoshii Ichiro

  Semiconductor Device Development Center Toshiba Corporation

• Harada Kazunari

  Semiconductor Group Toshiba Corporation

• Takagi Mariko

  Semiconductor Device Engineering Laboratory, Toshiba Corp.

• Takagi Mariko

  Semiconductor Device Development Center Toshiba Corporation

• Hoshino Naoki

  Semiconductor group, TOSHIBA CORPORATION

• Hoshino Naoki

  Semiconductor Group Toshiba Corporation

関連論文

• Relation between Stress-Induced Leakage Current and Dielectric Breakdown in SiN-Based Antifuses
• ESR Study of MOSFET Characteristics Degradation Mechanism by Water in Intermetal Oxide (Special Issue on LSI Failure Analysis)

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