FUKUNAGA Tsuneshi | Department of Materials Science and Ceramic Technology, Shonan Institute of Technology
スポンサーリンク
概要
関連著者
-
FUKUNAGA Tsuneshi
Department of Materials Science and Ceramic Technology, Shonan Institute of Technology
-
Fukunaga T
New Cosmos Electric Co. Ltd. Osaka Jpn
-
NAKASHIMA Hisao
Optoelectronics Joint Research Laboratory
-
FUKUNAGA Toshiaki
Optoelectronics Joint Research Laboratory
-
Ishida K
Yamagata Univ. Yamagata Jpn
-
Ishida K
Taiyo Yuden Co. Ltd.
-
石田 謙司
神戸大学 大学院工学研究科
-
MATSUI Kensuke
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
MATSUI Ken-ichi
Department of Physics, Faculty of Science, Osaka University
-
TAKAMORI Takeshi
Optoelectronics Joint Research Laboratory
-
MATSUI Kazunori
Optoelectronics Joint Research Laboratory
-
Matsui Kazunori
Department Of Chemistry College Of Engineering Kanto Gakuin University
-
Takamori T
Opto-electronics Laboratories R&d Group Oki Electric Industry Co. Ltd.
-
Kobayashi J
Optoelectronics Joint Research Laboratory:(present Address) Material & Electronic Devices Labora
-
Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
-
Ishida Koichi
Optoelectronics Joint Research Laboratory
-
Kobayashi Junji
Optoelectronics Joint Research Laboratory:(present Address) Material & Electronic Devices Labora
-
ISHIDA Koji
Optoelectronics Joint Research Laboratory
-
KOBAYASHI Junji
Institute of Medicinal Chemistry, Hoshi University
-
Kobayashi J
Kagami Memorial Laboratory For Materials Science And Technology Waseda University:research Developme
-
Nakashima H
Hyogo University
-
Kobayashi J
Institute Of Medicinal Chemistry Hoshi University
-
Ishida Koji
Optoelectoronic Industry And Technology Development Association:(present Address)chitose Institute O
-
Nakashima Hideharu
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
-
Morita T
Chiba Univ. Chiba Jpn
-
HASHIMOTO Hisao
Optoelectronic Joint Research Laboratory
-
Kobayashi K
Optoelectronics Joint Research Laboratory
-
Kobayashi Keisuke
Optoelectronics Joint Research Laboratory
-
MORITA Tetsuo
Optoelectronics Joint Research Laboratory
-
MIYAUCHI Eizo
Optoelectronics Joint Research Laboratory
-
NAKAJIMA Masato
Optoelectronics Joint Research Laboratory
-
BAMBA Yasuo
Optoelectronics Joint Research Laboratory
-
Nakajima M
Optoelectronics Joint Research Laboratory
-
Morita T
Optoelectronics Joint Research Laboratory
-
BAMBA Yasuo
Fujitsu Laboratories Ltd.
-
Narusawa Tadashi
Optoelectronics Joint Research Laboratory
-
Nakajima M
Toshiba Corp. Kawasaki
-
Nakajima M
Mitsubishi Electric Corp. Amagasaki
-
Narusawa T
Matsushita Res. Inst. Tokyo Kawasaki Jpn
-
Bamba Y
Fujitsu Laboratories Ltd.
-
Bamba Yasuo
Fujitsu Laboratories Limited
-
Miyauchi E
Fujitsu Ltd. Kanagawa
-
Morita T
Sumitomo Electric Inductries Ltd. Yokohama
-
Nakashima H
Osaka Univ. Osaka Jpn
-
HAYASHI Takashi
Department of Materials Science, Shonan Institute of Technology
-
Hiroshi Maiwa
Department Of Materials Science And Engineering Shonan Institute Of Technology
-
MAIWA Hiroshi
Department of Materials Science and Engineering, Shonan Institute of Technology
-
OHJI Naoto
Department of Materials Science and Ceramic Technology, Shonan Institute of Technology
-
HIROHARA Koichiro
Department of Materials Science and Ceramic Technology, Shonan Institute of Technology
-
Ohji Naoto
Department Of Materials Science And Ceramic Technology Shonan Institute Of Technology
-
TAKATANI Shin-ichiro
Central Research Laboratory, Hitachi, Lid.
-
Takatani Shin-ichiro
Central Research Laboratory Hitachi Lid.
-
Watanabe Nozomu
Optoelectronics Joint Research Laboratory
-
Hirohara Koichiro
Department Of Materials Science And Ceramic Technology Shonan Institute Of Technology
-
Hayashi Takashi
Department Of Applied Chemistry Graduate School Of Engineering Osaka University
-
Maiwa Hiroshi
Department of Human and Environmental Science, Shonan Institute of Technology, 1-1-25 Tsujido Nishikaigan, Fujisawa, Kanagawa 251-8511, Japan
著作論文
- Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
- Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs
- Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
- Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
- SIMS Study of Si-Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs-GaAs Superlattices
- Fabrication of Index-Guided AlGaAs Multiquantum Well Lasers with Buried Optical Guide by Si-Induced Disordering
- Implantation Energy Dependence of Composilional Disordering in Si Implanted GaAs/AlGaAs Superlattices Studied by Secondary Jon Mass Speetrometry
- SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice
- Preparation and Properties of Ferroelectric BaTiO_3 Thin Films by Sol-Gel Process
- Ion-Implantation Induced Damage in Al_xGa_As and Superlattices Studied by Rutherford Backscattering
- Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si^+-Ion Implantation
- Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam Epitaxy
- Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy
- Low-Temperature Photoluminescence of Lightly 81-Doped Al_xGa_As on (511) GaAs Substrates Grown by Molecular Beam Epitaxy