AlGaAs Window Stripe Buried Multiquantum Well Lasers
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-08-20
著者
-
NAKASHIMA Hisao
Optoelectronics Joint Research Laboratory
-
Ohta Tsuneaki
Optoelectronics Joint Research Laboratory
-
Ohta Tuneaki
Oki Electric Industry Co. Ltd.
-
Ohta Tsuneaki
Oki Ekectric Industry Co. Ltd.
-
Ohta Tsuneaki
Oki Electric Industry Co. Ltd.
-
Ohta T
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
-
Nakashima Hideharu
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
-
Semura Shigeru
Optoelectronics Joint Research Laboratory
-
Kuroda Takao
Optoelectronics Joint Research Laboratory
-
Kuroda T
Central Research Laboratory Hitachi Ltd.
-
Nakashima H
Osaka Univ. Osaka Jpn
-
Semura Shigeru
Transmission Media R&d Department Yokohama Research Laboratories Sumitomo Electric Industries
関連論文
- Premix-PICT 拡散法で作製したMgB_2超伝導バルク体の臨界電流特性に及ぼす微細組織の影響
- V添加10Crフェライト鋼におけるラス境界析出物の3D電子線トモグラフィー観察
- W03(2) 超微細粒金属材料の粒界原子構造と力学的性質(【W03】超強加工による超微細粒金属の組織と強度)
- AIC法による低温多結晶シリコン薄膜形成挙動の微細構造解析(TFTの材料・デバイス技術・応用及び一般)
- アルミニウム誘起結晶化法による多結晶シリコン薄膜形成挙動のその場加熱観察
- MgB_2多結晶バルク体の力学特性
- α-アルミナ単結晶における破面の3D電子線トモグラフィー観察
- 電子線トモグラフィーによる結晶材料組織の3次元可視化
- FIBによる生体硬組織薄膜化とTEM観察
- Effects of SO_2 on Respiratory System of Adult Miyakejima Resident 2 Years after Returning to the Island
- Toxicity of Silicon Compounds in Semiconductor Industries
- Premix-PICT 拡散法で作製したMgB_2バルク体のJ_c特性と微細組織
- MgB_2多結晶バルク体の粒界性格の解析
- 薄片化したα-アルミナの応力拡大係数と亀裂進展挙動
- Oral Toxicity of Bismuth in Rat : Single and 28-Day Repeated Administration Studies
- A 13-Week Toxicity Study of Bismuth in Rats by Intratracheal Intermittent Administration
- 電子線トモグラフィーによる格子欠陥の3次元可視化
- 超強加工された純銅の粒界構造
- コイルばねクリープ試験法によるSn系はんだ合金の低応力域における高温変形挙動
- In-situ Observation of Dislocation Motion and Its Mobility in Fe-Mo and Fe-W Solid Solutions at High Temperatures
- MgB_2/B多層膜の作製と超伝導特性
- 組成を変化させて作製したMgB_薄膜の超伝導特性
- MgB_2/Ni多層膜のJ_c-B特性
- MgB_2/B多層膜のJ_cの磁場依存性
- 6000系アルミニウム合金の立方体方位粒形成過程
- 電子ビーム蒸着法で作製したMgB_2薄膜の微細組織の組成依存性
- 組成を変化させて作製したMgB_薄膜の超伝導特性
- 18Cr-9Ni-3Cu-Nb-N鋼のクリープ変形に伴う組織変化とそのクリープ破壊への影響(力学特性)
- 431 高Cr実用フェライト系耐熱鋼の応力急変試験によるクリープ変形挙動評価(余寿命と寿命延伸,高温機器・材料の損傷検出・評価・余寿命推定,オーガナイスドセッション2)
- 722 コイルばねクリープ試験法による鉛フリーはんだの低応力挙動解析(測定,一般セッション)
- ScとZrを複合添加したAl-Mg-Si系合金熱間圧延板に形成する析出物の形態
- 2種類の回折条件を用いた転位組織の3次元可視化
- Direct Evidence of Polycrystalline Silicon Thin Films Formation during Aluminum Induced Crystallization by In-Situ Heating TEM Observation
- Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation
- in-situ MgB_2 線材の熱処理過程の組織観察
- 9Crフェライト系耐熱鋼のΩ法解析とクリープ強化機構のΩ値への影響(力学特性)
- 高密度MgB_2バルクの力学特性
- Formation and Characterization of GaAs Quantum Wires at Giant Step Edges on Vicinal (110) GaAs Surfaces
- Observation of X-Ray Diffraction Spots from the (√×√)R30°Bi Structure on the Si(111) Surface under the Condition of Large Incidence Angle
- Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
- Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
- Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs
- Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
- Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
- SIMS Study of Si-Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs-GaAs Superlattices
- Fabrication of Index-Guided AlGaAs Multiquantum Well Lasers with Buried Optical Guide by Si-Induced Disordering
- Implantation Energy Dependence of Composilional Disordering in Si Implanted GaAs/AlGaAs Superlattices Studied by Secondary Jon Mass Speetrometry
- SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice
- Structural and Electronic Properties of Adsorbed Thiophene on Cu(111) Studied by S K-Edge X-Ray Absorption Spectroscopy
- Local Structures of Carbon Thin Films Synthesized by the Hot Filament Chemical Vapor Deposition Method X-Ray-Absorption Near-Edge Structure and Raman Spectroscopic Studies
- Temperature-Dependent Br K-Edge EXAFS Study on AgBr_xCl_ Solid Solutions
- Applicability of the Soft X-Ray Standing-Wave Method to Surface Structure Determination
- XANES and Raman Spectroscopic Studies of Diamond Films Synthesized by Hot Filament CVD
- Bromine Adsorption on Supported Palladium Ultrafine Particles Studied by Br K-Edge EXAFS Spectroscopy
- Surface Structure of N/Pd(100)-c(2 × 2) Determined by Tensor Low Energy Electron Diffraction Analysis
- Structure, Composition, and Vibrational Property of Iodine-Doped Polyvinyl Alcohol Studied by Temperature-Dependent I K-Edge Extended X-Ray-Absorption Fine Structure
- Local Structures of RbBr_xCl_ and CuBr_xCl_ Solid Solutions Studied by Temperature-Dependent Br K-Edge Extended X-Ray-Absorption Fine-Structure Spectroscopy
- Construction of a Scanning Tunneling Microscope for Electrochemical Studies
- X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
- Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique
- New Computed Tomography Algorithm of Electrostatic Force Microscopy Based on the Singular Value Decomposition Combined with the Discrete Fourier Transform
- Simulated Computed Tomography for the Reconstruction of Vacancies Using an Atomic Force Microscope Image
- Feasibility Study on a Novel Type of Computerized Tomography Based on Scanning Probe Microscope
- Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope
- Effect of the Soft X-Ray Standing Wave Fields on the Total Electron Yield Spectra from an InP Crystal
- In Situ Imaging of Electrochemical Deposition of Ag on Au(111)
- Ion-Implantation Induced Damage in Al_xGa_As and Superlattices Studied by Rutherford Backscattering
- Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si^+-Ion Implantation
- A New Approach of E-beam Proximity Effect Correction for High-Resolution Applications
- Voltage-Dependence of Scanning Tunneling Microscopy on Titanium Surface in Air
- A Model for DX Centers : Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys
- Study of Pulse Erasing on Phase-Change Erasable (PCE) Sampled Servo Disc : Media
- Study of Pulse Erasing on Phase-Change Erasable (PCE) Sampled Servo Disc
- New Disk Structure for Million Cycle Overwritable Phase Change Optical Disk
- Conformal Chermical Vapor Deposition TiN(111) Film Formation as an Underlayer of Al for Highly Reliable Interconnects
- Characterization of Direct-Contact Via Plug Formed by Using Selective Aluminum Chemical Vapor Deposition
- Improvement in Radiation Stability of SiN X-Ray Mask Membranes
- Recording and Erasing Characteristics at a Wavelength of 680 nm for a Phase-Change Disk Designed for 830 nm Wavelength
- Thin Injection-Molded Substrate for High Density Recording Phase-Change Rewritable Optical Disk
- Metalorganic Chemical Vapor Deposition of Aluminum-Copper Alloy Films
- Improvement of Gap-Filling Property of O_3-tetraethylorthosilicate (TEOS) Film by Ethanol Surface Treatment
- Optically High Transparent SiN Mask Membrane with Low Stress Deposited by Low Pressure Chemical Vapor Deposition
- Fabrication of X-Ray Mask Using W-CVD for Forming Absorber Pattern : Lithography Technology
- GaAs MESFET's with a Thermally Stable LaB_6 Self-Aligned Gate
- Study of Thermal Stability of LaB_6 and GaAs Interfaces by High Energy Ion Scattering
- AlGaAs Window Stripe Buried Multiquantum Well Lasers
- Cross Sectional Transmission Electron Microscopy of Zn Diffusion Induced Disordering of GaAlAs-GaAs Multiquantum-Well Structures
- AlGaAs/GaAs Multiquantum Well Lasers with Buried Multiquantum Well Optical Guide
- Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam Epitaxy
- Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy
- AlGaAs/GaAs Buried Multiquantum Well Lasers with a Reactive Ion Etched Window Facet
- Fabrication of X-Ray Mask Using W-CVD for Forming Absorber Pattern
- Phase Change Disk Media Having Rapid Cooling Structure : PHASE CHANGE MEDIA I
- Interface Analysis of Al_2O_3/InP Structure Prepared by Molecular Beam Deposition
- High Energy Ion Channeling Study of MBE-Grown GaAs(001) Surface Structures
- Asymmetric Hydroformylation of Olefins in Higyly Crosslinked Polymer Matrixes
- Low-Temperature Photoluminescence of Lightly 81-Doped Al_xGa_As on (511) GaAs Substrates Grown by Molecular Beam Epitaxy
- Photoluminescenee from AlGaAs-GaAs Single Quantum Welts with Growth Interrupted Heleroinlerfaces Grown on GaAs (100) and (311) Substrates at Various Growth Temperatures by Molecular Beam Epitaxy
- Photoluminescence Study of GaAs-AlGaAs Multiquantum Well Grown by Molecular-Beam Epitaxy
- Schottky Interface Formation between LaB6 and GaAs(001) Covered with a Native-Oxide Layer