Photoluminescenee from AlGaAs-GaAs Single Quantum Welts with Growth Interrupted Heleroinlerfaces Grown on GaAs (100) and (311) Substrates at Various Growth Temperatures by Molecular Beam Epitaxy
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概要
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Photoluminescence (PL) measurements at 1.8 K have been carried out for AlGaAs-GaAs single quantum well (SQW) structures grown on GaAs (100) and (311) substrates at various growth temperatures (T_g) by molecular beam epitaxy. Several exciton lines originating from monolayer terrace formation are observed for the SQW grown on (100) surface with 2 min growth interruption (GI) at heterointerfaces under As_4 pressure. The number of these exciton lines increases with T_g, suggesting that the character of columnar growth appears weakly with increasing T_g. Fine structures, however, are not observed for SQW's grown on (311)A and (311)B surfaces with 2 min GI at heteroinerfaces. The line widths of PL peaks from SQW's grown on (311)A and (311)B surfaces with GI are significantly larger than those without GI. These facts indicate that the growth mode on (311) surfaces is of much less layer-by-layer character than that on (100) surfaces.
- 社団法人応用物理学会の論文
- 1986-10-20
著者
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NAKASHIMA Hisao
Optoelectronics Joint Research Laboratory
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FUKUNAGA Toshiaki
Optoelectronics Joint Research Laboratory
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