Kawakyu Katsue | Toshiba Corp. Research And Development Center
スポンサーリンク
概要
関連著者
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Uchitomi N
Research And Development Center Toshiba Corp.
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Nagaoka M
Research And Development Center Toshiba Corp.
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Kawakyu Katsue
Toshiba Corp. Research And Development Center
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Kitaura Y
Research And Development Center Toshiba Corp.
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亀山 敦
神奈川大学工学部化学教室
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Nagaoka Masami
Toshiba Research and Development Center
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Kawakyu Katsue
Toshiba Research and Development Center
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Uchitomi Naotaka
Toshiba Research and Development Center
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Ikeda Y
Mitsubishi Electric Corporation Information Technology R&d Center
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Ikeda Y
Mitsubishi Electric Corp. Kamakura‐shi Jpn
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Uchitomi Naotaka
Research And Development Center Toshiba Corporation
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Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
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Ishida K
Semiconductor System Engineering Center Toshiba Corporation
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KAWAKYU Katsue
Research and Development Center, TOSHIBA CORPORATION
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NAGAOKA Masami
Research and Development Center, TOSHIBA CORPORATION
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KITAURA Yoshiaki
Research and Development Center, TOSHIBA CORPORATION
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Kitaura Yoshiaki
Toshiba Research and Development Center
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KAMEYAMA Atsushi
Toshiba Research and Development Center
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Ishida K
Yamagata Univ. Yamagata Jpn
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吉村 昌弘
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Kameyama Atsushi
Toshiba Corporation Semiconductor Company
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Kitaura Yoshiaki
Research And Development Center Toshiba Corp.
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石田 謙司
神戸大学 大学院工学研究科
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Nagaoka Masami
Research and Development Center, Toshiba Corp.
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Sasaki Tatsuya
Opto And Wireless Deivce Res. Labs. Nec Corporation
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吉村 昌弘
東工大・工材研
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Takagi E
Toshiba Corp. Kawasaki‐shi Jpn
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Ishida Shinji
Ulsi Devices Development Laboratories Nec Corporation
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Ishida S
Toshiba Microelectronics Corp.
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Takagi Eiji
Corporate Research & Development Center Toshiba Corporation
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KAMEYAMA Atsushi
Research and Development Center, TOSHIBA CORPORATION
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IKEDA Yoshiko
Research and Development Center, TOSHIBA CORPORATION
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ISHIDA Kenji
Semiconductor System Engineering Center, TOSHIBA CORPORATION
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NITTA Tomohiro
Research and Development Center, TOSHIBA CORPORATION
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YOSHIMURA Misao
Research and Development Center, TOSHIBA CORPORATION
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Inoue Tomotoshi
Toshiba Research and Development Center
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Obayashi Shuichi
Toshiba Research and Development Center
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Kayano Hiroyuki
Toshiba Research and Development Center
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Takagi Eiji
Toshiba Research and Development Center
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Tanabe Yoshikazu
Toshiba Research and Development Center
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Yoshimura Misao
Toshiba Research and Development Center
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Ishida Kenji
Toshiba Research and Development Center
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Yoshimura Misao
Research And Development Center Toshiba Corp.
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Ishida Kohtaro
Department Of Physics Science University Of Tokyo
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WAKIMOTO Hirotsugu
Research and Development Center, Toshiba Corp.
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NAGASAWA Hironori
Toshiba Microelectronics Corp.
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HONMYO Kenji
Discrete Semiconductor Div., Toshiba Corp.
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ISHIDA Shinji
Toshiba Microelectronics Corp.
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WAKIMOTO Hirotsugu
Toshiba Research and Development Center
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SESHITA Toshiki
Toshiba Research and Development Center
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IKEDA Yoshiko
Toshiba Corp., Research and Development Center
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Tanabe Y
Tokyo Inst. Of Technol. Yokohama‐shi
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Honmyo Kenji
Discrete Semiconductor Div. Toshiba Corp.
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Kayano Hiroyuki
Toshiba Corporation
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Ishida Kenji
Semiconductor System Engineering Center Toshiba Corporation
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Inoue T
Ntt Docomo Chugoku Hiroshima‐shi Jpn
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Nitta T
Research And Development Center Toshiba Corporation
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Tanabe Y
Hiroshima Univ. Higashihiroshima Jpn
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Tanabe Yoshikazu
Research And Development Center Toshiba Corp.
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Sasaki T
Opto And Wireless Deivce Res. Labs. Nec Corporation
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Nitta Tomohiro
Research And Development Center Toshiba Corporation
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Wakimoto Hirotsugu
Research And Development Center Toshiba Corp.
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Seshita Toshiki
Research And Development Center Toshiba Corp.
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Obayashi S
Corporate R&d Center Toshiba Corp.
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Obayashi Shuichi
Toshiba Corporation
著作論文
- A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
- A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications
- 0.012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications
- Single Low 2.4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1.9-GHz PHS Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
- A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1.9-GHz PHS(Special Issue on Microwave and Millimeter-Wave Module Technology)