Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters

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概要

• 論文の詳細を見る

• We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8 - 12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.

• （社）電子情報通信学会の論文
• 2008-12-01

著者

• KUDO Kazuhiro

  Chiba University

• Kudo K

  Chiba Univ. Chiba Jpn

• Kudo Kazuhiro

  Department Of Electronic And Mechanical Engineering Faculty Chiba University

• Kudo Kazuhiro

  Chiba Univ. Chiba Jpn

• Kudo Kazuhiro

  Oitda Advanced Organic Device Project Chiba Laboratory

• Kudo Kazuhiro

  Department Of Electronics And Mechanical Engineering Faculty Of Engineering Chiba University

• KUDO Kazuhiro

  Graduate School of Engineering, Chiba University

• YAMAUCHI Hiroshi

  Faculty of Engineering, Chiba University

• Watanabe Yasuyuki

  Center for Frontier Science, Chiba University

• IECHI Hiroyuki

  Technology R&D Center, Ricoh Co. Ltd.

• Yamauchi Hiroshi

  Graduate School Of Engineering Chiba University

• Iechi Hiroyuki

  Technology R&d Center Ricoh Co. Ltd.

• Iechi Hiroyuki

  Ricoh Co. Ltd Environmental Technology R&d Center

• Watanabe Yasuyuki

  Center For Frontier Science Chiba University

• Kudo Kazuhiro

  Graduate School Of Engineering Chiba University

• Yamauchi Hiroshi

  Faculty Of Engineering Ehime University

• Kudo Kazuhiro

  Chiba University Faculty Of Engineering

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