Inelastic Electron Tunneling Spectroscopy of Langmuir-Blodgett Monolayers on Silicon Substrate
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概要
- 論文の詳細を見る
An inelastic electron tunneling spectroscopy (IETS) technique is employed to investigate Langmuir-Blodgett monolayers deposited on silicon substrates. Thermally formed SiO_2 layers are used as a tunneling barrier to obtain reliable and sensitive signals. IETS data, which are compared to IR and Raman data, show the stability and chemical reactions of organic monolayers at the metal or SiO_2 interface.
- 社団法人応用物理学会の論文
- 1991-07-15
著者
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Tanaka Kuniaki
Department Of Electronics And Mechanical Engineering Chiba University
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Kudo K
Chiba Univ. Chiba Jpn
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Kudo Kazuhiro
Faculty Of Engineering Chiba University
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Okazaki Choichiro
Central Research Laboratory Hitachi Ltd
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Okazaki Choichiro
Faculty Of Engineering Chiba University
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Okazaki Choichiro
The Authors Are With Central Research Laboratory Hitachi Ltd.
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Tanaka K
Department Of Material Chemistry Graduate School Of Engineering Kyoto University
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KUNIYOSHI Shigekazu
the Department of Electronics and Mechanical Engineering, Chiba University
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Kuniyoshi Shigekazu
Faculty of Engineering, Chiba University
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Tanaka Kuniaki
Faculty Of Engineering Chiba Unviversity
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Kuniyoshi Shigekazu
The Department Of Electronics And Mechanical Engineering Chiba University
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