Fabrication of Active Light-Emitting Device Combined with ZnO Transistors

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概要

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• Organic light-emitting diodes (OLEDs) have received much attention owing to their flexibility, low cost, and ease of processing. Although the active matrix display is a suitable system for what transistors and OLEDs with a large aperture ratio should be fabricated in each pixel. In this work, as one of the methods of expanding effective light-emitting area for active matrix displays, a new type of active light-emitting device combined with a ZnO transistor is proposed. The low-temperature, low-damage sputtering method improves on current by two orders of magnitude. A luminance of the active light-emitting device driven by ZnO transparent field-effect transistor (FET) was obtained. We fabricated a device with ZnO transparent FET and reported the electrical properties of ZnO FET.

• 2009-04-25

著者

• Iizuka Masaaki

  Faculty Of Education Chiba University

• NAKAMURA Masakazu

  Graduate School of Engineering, Chiba University

• Watanabe Yasuyuki

  Center For Frontier Science Chiba University

• Kudo Kazuhiro

  Graduate School Of Engineering Chiba University

• Yamauchi Hiroshi

  Faculty Of Engineering Ehime University

• Watanabe Yasuyuki

  Center of Frontier Science, Chiba University, 1-33 Yayoi, Inage, Chiba 263-8522, Japan

• Nakamura Masakazu

  Graduate School of Engineering, Chiba University, 1-33 Yayoi, Inage, Chiba 263-8522, Japan

• Yamauchi Hiroshi

  Faculty of Engineering, Chiba University, 1-33 Yayoi, Inage, Chiba 263-8522, Japan

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