A Transceiver PIC for Bidirectional Optical Communication Fabricated by Bandgap Energy Controlled Selective MOVPE (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
スポンサーリンク
概要
- 論文の詳細を見る
As a low-cost optical transceiver for access network systems, we propose a new monolithic transceiver photonic integrated circuit (PIC) fabricated by bandgap energy controlled selective metalorganic vapor phase epitaxy (MOVPE). In the PIC, all optical components are monolithically integrated. Thus, the number of optical alignment points is significantly reduced and the assembly costs of the module is decreased compared to those of hybrid modules, that use silica waveguides. Moreover, by using selective MOVPE, extremely low-loss buried heterostructure waveguides can be fabricated without any etching. In-plane bandgap energy control is also possible, allowing the formation of active and passive core layers simultaneously without complicated fabrication. The transceiver PIC showed fiber-coupled output power of more than 1mW and receiver bandwidth of 7GHz. Modulation and detection operations at 500Mb/s were also demonstrated. As a cost effective fabrication technique for monolithic PICs, bandgap energy controlled selective MOVPE is a promising candidate.
- 社団法人電子情報通信学会の論文
- 1997-01-25
著者
-
Hamamoto Kiichi
Opto-electronics Research Laboratories Nec Corporation
-
SASAKI Tatsuya
Opto-Electronics and High Frequency Device Research Laboratories, NEC Corporation
-
Makita Kikuo
Opto-electronics Research Laboratories Nec Corporation
-
Komatsu Keiro
Opto-electronics Research Laboratories Nec Corporation
-
TAKEUCHI Takeshi
Opto-electronics Research Laboratories, NEC Corporation
-
HAYASHI Masako
Opto-electronics Research Laboratories, NEC Corporation
-
TAGUCHI Kenkou
Opto-electronics Research Laboratories, NEC Corporation
-
Taguchi Kenkou
Opto-electronics Research Laboratories Nec Corporation
-
Hayashi Masako
Opto-electronics Research Laboratories Nec Corporation
-
Takeuchi Takeshi
Opto-electronics Research Laboratories Nec Corporation
関連論文
- Hybrid Integrated 4×4 Optical Matrix Switch Module on Silica Based Planar Waveguide Platform (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Hybrid Integrated 4×4 Optical Matrix Switch Module on Silica Based Planar Waveguide Platform (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Gb/s-Range Semiconductor and Ti:LiNbO_3 Guided-Wave Optical Modulators (Special Issue on Optomicrowave Techniques and Their Applications)
- Wide-Wavelength-Range Modulator-Integrated DFB Laser Diodes Fabricated on a Single Wafer(Special Issue on High-Capacity WDM/TDM Networks)
- Dark Current and Breakdown Analysis in In(Al)GaAs/InAlAs Superlattice Avalanche Photodiodes
- Band Offset Dependance on Impact Ionization Rates in InAlGaAs Staircase Avalanche Photodiodes
- Doping Properties of Zinc in InAlGaAs Grown by Low-Pressure Metal-Organic Vapor-Phase Epitaxy
- InAlGaAs Staircase Avalanche Photodiodes
- A Transceiver PIC for Bidirectional Optical Communication Fabricated by Bandgap Energy Controlled Selective MOVPE (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Preliminary Reliability Evaluations of GaAs/AlGaAs Electro-Optic Directional Coupler Switches
- In-Plane Bandgab Energy Controlled Selective MOVPE and Its Applications to Photonic Integrated Circuits