Pulse-mode Selective Metal-organic Vapor Phase Epitaxy Method for Migration Enhancement and High-quality Strained InGaAsP Multi-quantum Well Structure
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概要
- 論文の詳細を見る
A pulse-mode selective metal-organic vapor phase epitaxy (MOVPE) method for achieving excellent crystal quality of an InGaAsP strained multi-quantum well (MQW) structure on a narrow stripe region was investigated. The migration enhancement mechanism for pulse-mode epitaxy was studied from the view point of the decomposition state of group-III sources. By using the proposed method, the flatness of the selectively grown layers was drastically improved, and a very narrow photoluminescence spectrum linewidth of 28 meV at 25℃ was realized for the strained MQW structure. The 1.3μm-wavelength buried heterostructure (BH) laser diode (LD) with a strained MQW active layer grown by the pulse-mode selective MOVPE showed a very low-threshold current of 12 mA (18 mA) and high-slope efficiency of 0.37 (0.33)W/A at the high temperature of 85℃ (100℃).
- 社団法人応用物理学会の論文
- 1999-03-15
著者
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KOMATSU Keiro
ULSI Device Development Laboratories, NEC Corporation
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Komatsu Keiro
Ulsi Device Development Laboratories Nec Corporation
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SAKATA Yasutaka
ULSI Device Development Laboratories, NEC Corporation
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Sakata Yasutaka
Ulsi Device Development Laboratories Nec Corporation
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- Pulse-mode Selective Metal-organic Vapor Phase Epitaxy Method for Migration Enhancement and High-quality Strained InGaAsP Multi-quantum Well Structure