Fabrication of Thin Silicon Wires by Anisotropic Wet Etching of SOI Structures
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概要
- 論文の詳細を見る
A fabrication method of thin single-crystalline silicon wires on SiO_2 is reported. The wires are fabricated by anisotropic wet etching of (110) and (100) SOI wafers. We obtained a thin (110)) SOI wire of 0.2μm width and 0.2μm height with a rectangular cross section. Since the (110) SOI wires are enclosed by a pair of ultraflat {111} side walls parallel to each other, this method has the potential to form ultranarrow wires by careful control of the etching conditions.
- 社団法人応用物理学会の論文
- 1991-09-01
著者
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ITOH Kazuo
Department of Clinical Cariology, Showa University School of Dentistry
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Sasaki Yoshisato
Department Of Electronics Faculty Of Technology Gunma University
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IWAMEJI Kazuaki
Department of Electronics, Faculty of Technology, Gunma University
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Itoh Kazuo
Department Of Cardiovascular Surgery Aomori General Hospital
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Itoh Kazuo
Department Of Electronics Faculty Of Technology Gunma University
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Iwameji Kazuaki
Department Of Electronics Faculty Of Technology Gunma University:kyocera Co.
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SASAKI Yoshisato
Department of Electronics, Faculty of Technology, Gunma University
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Sasaki Yoshisato
Department of Electronic Engineering, Gunma University, Kirya, Gunma 376
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ITOH Kazuo
Department of Electronics, Faculty of Technology, Gunma University
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