Enhanced Diffusion of Implanted Arsenic in Silicon at an Early Stage of Annealing
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概要
- 論文の詳細を見る
The diffusion profiles of the heavily ion-implanted arsenic (As) in silicon by short annealing time were examined by Hall effect measurements in conjunction with anodization and layer removal. The arsenic diffusion profiles obtained by computer simulation were compared with the measured results. It is shown by this comparison that the diffusion of the arsenic atoms is enhanced at an early stage of annealing.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-08-20
著者
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Tanuma Sei-ichi
Department Of Biochemistry Faculty Of Pharmaceutical Science Science University Of Tokyo
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Itoh Kazuo
Department Of Cardiovascular Surgery Aomori General Hospital
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Sasaki Yoshisato
Department of Electronic Engineering, Gunma University, Kirya, Gunma 376
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Itoh Kazuo
Department of Electronic Engineering, Gunma University, Kirya, Gunma 376
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Tanuma Sei-ichi
Department of Electronic Engineering, Gunma University, Kirya, Gunma 376
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