Localization in Low Temperature Conduction of Si Surface Layers Implanted with Phosphorus

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概要

• 論文の詳細を見る

• Electrical conduction at low temperatures was studied for defective surfacelayers of silicon (thickness of 330-600A, electron concentration of -3x10"cm ') tcroduced b>z ion imrlantation of rhosr>horus and subsectuent thermalannealinz at 480'C, Below 1-4K, both effects of localization and Coulombinteraction in two dimensions were observed in In T dependence of conductivity.Samples having thicker conductive layers showed V' T dependence of conductivitydue to the three dimensional localization effect in the temperature range between1 and 7 K.

• 社団法人日本物理学会の論文
• 1985-10-15

著者

• ITOH Kazuo

  Department of Clinical Cariology, Showa University School of Dentistry

• Tanuma Sei-ich

  Department Of Biochemistry Faculty Of Pharmaceutical Sciences Tokyo University Of Science

• NAGANO Hiroshi

  Institute for Solid State Physics, University of Tokyo.

• Oda Yasukage

  Institute For Solid State Physics The University Of Tokyo

• SASAKI Yoshisato

  Department of Electronics,Faculty of Technology,Gunma University

• Nagano Hiroshi

  Institute For Solid State Physics University Of Tokyo

• Tanuma Sei-ich

  Department Of Electronics Faculty Of Technology Gunma University

• ONO Takayoshi

  Institute for Solid State Physics,The University of Tokyo

• Sasaki Yoshisato

  Department Of Electronics Faculty Of Technology Gunma University

• Ono Takayoshi

  Institute For Solid State Physics The University Of Tokyo

• Itoh Kazuo

  Department Of Cardiovascular Surgery Aomori General Hospital

• Itoh Kazuo

  Department Of Electronics Faculty Of Technology Gunma University

• Nagano Hiroshi

  Institute For Solid State Physics The University Of Tokyo

• Sasaki Yoshisato

  Department of Electronic Engineering, Gunma University, Kirya, Gunma 376

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