Localization in Low Temperature Conduction of Si Surface Layers Implanted with Phosphorus
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概要
- 論文の詳細を見る
Electrical conduction at low temperatures was studied for defective surfacelayers of silicon (thickness of 330-600A, electron concentration of -3x10"cm ') tcroduced b>z ion imrlantation of rhosr>horus and subsectuent thermalannealinz at 480'C, Below 1-4K, both effects of localization and Coulombinteraction in two dimensions were observed in In T dependence of conductivity.Samples having thicker conductive layers showed V' T dependence of conductivitydue to the three dimensional localization effect in the temperature range between1 and 7 K.
- 社団法人日本物理学会の論文
- 1985-10-15
著者
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ITOH Kazuo
Department of Clinical Cariology, Showa University School of Dentistry
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Tanuma Sei-ich
Department Of Biochemistry Faculty Of Pharmaceutical Sciences Tokyo University Of Science
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NAGANO Hiroshi
Institute for Solid State Physics, University of Tokyo.
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Oda Yasukage
Institute For Solid State Physics The University Of Tokyo
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SASAKI Yoshisato
Department of Electronics,Faculty of Technology,Gunma University
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Nagano Hiroshi
Institute For Solid State Physics University Of Tokyo
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Tanuma Sei-ich
Department Of Electronics Faculty Of Technology Gunma University
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ONO Takayoshi
Institute for Solid State Physics,The University of Tokyo
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Sasaki Yoshisato
Department Of Electronics Faculty Of Technology Gunma University
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Ono Takayoshi
Institute For Solid State Physics The University Of Tokyo
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Itoh Kazuo
Department Of Cardiovascular Surgery Aomori General Hospital
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Itoh Kazuo
Department Of Electronics Faculty Of Technology Gunma University
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Nagano Hiroshi
Institute For Solid State Physics The University Of Tokyo
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Sasaki Yoshisato
Department of Electronic Engineering, Gunma University, Kirya, Gunma 376
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