Transport Property of 1T-TaS_<2-x>Se_x in the Anderson Localized State
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概要
- 論文の詳細を見る
The electrical resistivity and magnetoresistance of IT-TaS. ,Se. (,V=0-0.4)have been measured from a few Kelvin to 30 mK. The resistivity follows a twodimensional variable range hopping process in the temperature range from a fewKelvin to 1 K and deviates upward at lower temperatures. On the other hand, themagnetoresistance is found to show positive and negative ones. The resistivityand the corresponding positive magnetoresistance become larger as the growthtemperature of crystal becomes higher and/or as the doping amount of Se becomesmore. Below about 0.1 K, only the negative magnetoresistance is observed. Theseresults are qualitatively understood by taking into account the Zeeman effect ofthe electrons, suppression of hopping process by the magnetic field and also themagnetic order of the spins of the localized electrons.
- 社団法人日本物理学会の論文
- 1984-11-15
著者
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Oda Yasukage
Gradnate School Of Science Osaka University
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ONUKI Yoshichika
Institute of Materials Science,University of Tsukuba
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NAGANO Hiroshi
Institute for Solid State Physics, University of Tokyo.
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Oda Yasukage
Institute For Solid State Physics The University Of Tokyo
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FURUKAWA Akio
Institute for Solid State Physics,University of Tokyo
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Onuki Yoshichika
Institute Of Material Science The University Of Tsukuba
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Furukawa A
Department Of Physics Kyoto University
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Nagano H
Kyushu Univ. Fukuoka
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Nagano Hiroshi
Institute For Solid State Physics University Of Tokyo
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Nagano Hiroshi
Institute For Solid State Physics The University Of Tokyo
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