Ueno Y | Nec Corp. Ibaraki Jpn

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概要

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著作論文

Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering
Nonexistence of Long-Range Order in Ga_In_P Epitaxial Layers Grown on (111)B and (110) GaAs Substrates : Semiconductors and Semiconductor Devices
632.7 nm CW Operation (20℃) of AlGaInP Visible Laser Diodes Fabricated on (001) 6°off toward [110] GaAs Substrate
Control Scheme for Optimizing the Interferometer Phase Bias in the Symmetric-Mach-Zehnder All-Optical Switch(Joint Special Issue on Recent Progress in Optoelectronics and Communications)(OECC Awarded)
Control Scheme for Optimizing the Interferometer Phase Bias in the Symmetric-Mach-Zehnder All-Optical Switch (IEICE Trans., Electron., Vol. E86-C, No. 5, Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Ultrafast Hybrid-Integrated Symmetric Mach-Zehnder All-Optical Switch and Its 168Gbps Error-Free Demultiplexing Operation(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
Ultrafast 168 GHz 1.5 ps 1 fJ Symmetric-Mach-Zehnder-Type All-Optical Semiconductor Switch
All-Optical Divided-Clock Extractor Using an Ultrafast All-Optical Symmetric-Mach-Zehnder-Type Semiconductor Switch Embedded in a Optical Loop
Spectral Phase-Locking in Ultrafast All-Optical Mach-Zehnder-Type Semiconductor Wavelength Converters
Femtosecond Operation of a Polarization-Discriminating Symmetric Mach-Zehnder All-Optical Switch and Improvement in Its High-Repetition Operation (Joint Special Issue on Photonics in Switching : Systems and Devices)
Femtosecond Operation of a Polarization-Discriminating Symmetric Mach-Zehnder All-Optical Switch and Improvement in Its High-Repetition Operation (Joint Special Issue on Photonics in Switching : Systems and Devices)
Large Phase Shifts due to the X(^2) Cascading Nonlinearity in Large Walk-off and Loss Regimes in Semiconductors and Other Dispersive Materials

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