Onisawa Kenichi | Hitachi Research Laboratory Hitachi Ltd.
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概要
関連著者
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Onisawa Kenichi
Hitachi Research Laboratory Hitachi Ltd.
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Sasaki Tatsuya
Opto And Wireless Deivce Res. Labs. Nec Corporation
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Suzuki T
Research Center Sony Corporation
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Mimura Akio
Hitachi Research Laboratory Hitachi Ltd.
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Ono K
Electron Tube Amp Devices Div. Hitachi Ltd.
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KONISHI Nobutake
Hitachi Research Laboratory, Hitachi Ltd.
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Ono Yoshimasa
Hitachi Research Laboratory Hitachi Ltd.
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Tsumura Makoto
Hitachi Research Laboratory Hitachi Ltd.
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ONO Kikuo
Electron Tube amp Devices Div., Hitachi, Ltd.
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SUZUKI Takashi
Electron Tube amp Devices Div., Hitachi, Ltd.
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SAKUTA Hiroki
Electron Tube amp Devices Div., Hitachi, Ltd.
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ONISAWA Kenichi
Hitachi Research Laboratory, Hitachi, Ltd.
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HIROSHIMA Minoru
Electron Tube amp Devices Div., Hitachi, Ltd.
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SASAKI Tooru
Electron Tube amp Devices Div., Hitachi, Ltd.
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Sakuta Hiroki
Electron Tube Amp Devices Div. Hitachi Ltd.
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Sasaki T
Opto And Wireless Deivce Res. Labs. Nec Corporation
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Konishi Nobutake
Hitachi Research Laboratory Hitachi Ltd.
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Ishida Takeshige
Toyama Works Kokusai Electric Co. Ltd.
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SHINAGAWA Youmei
Hitachi Research Laboratory, Hitachi, Ltd.
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KAWACHI Genshirou
Hitachi Research Laboratory, Hitachi, Ltd.
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MINEMURA Tetsurou
Hitachi Research Laboratory, Hitachi, Ltd.
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HARA Masayuki
Toyama Works, Kokusai Electric Co., Ltd.
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TAKEDA Tomohiko
Toyama Works, Kokusai Electric Co., Ltd.
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Hiroshima Minoru
Electron Tube Amp Devices Div. Hitachi Ltd.
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Takeda Tomohiko
Toyama Works Kokusai Electric Co. Ltd.
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Kawachi Genshirou
Hitachi Research Laboratory Hitachi Ltd.
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Shinagawa Youmei
Hitachi Research Laboratory Hitachi Ltd.
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Minemura Tetsurou
Hitachi Research Laboratory Hitachi Ltd.
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Kawakami Hideaki
Hitachi Ltd. Electron Tube & Devices Division
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Hara Masayuki
Toyama Works Kokusai Electric Co. Ltd.
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Fuyama Moriaki
Hitachi Research Laboratory Hitachi Ltd.
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KONISHI Nobutake
Hitachi Research Laboratory
著作論文
- A 24 cm Diagonal TFT-LCD Fabricated Using a Simplified, Four-Photolithographic Mask Process (Special Issue on Liquid-Crystal Displays)
- Flat and Large Poly-Si Grains by a Continuous Process of Plasma-Enhanced Chemical Vapor Deposition of a-Si and Its Direct Laser Crystallization
- Transferred Charge in the Active Layer and EL Device Characteristics of TFEL Cells