Flat and Large Poly-Si Grains by a Continuous Process of Plasma-Enhanced Chemical Vapor Deposition of a-Si and Its Direct Laser Crystallization

概要

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A multichamber processor was developed for a 150 mm × 150 mm-sized substrate which combines chemical vapor deposition (CVD) reactors and a laser annealer. Deposition of a-Si was carried out at 430℃ using a new high-temperature heater and the hydrogen content was reduced to 6 at%. The continuous process of a-Si deposition and one-step direct laser crystallization provides a simple poly-Si preparation process which yields flat poly-Si grains (<R_<rms>:4 nm). It was also found that dehydrogenation treatment increased film roughness.
社団法人応用物理学会の論文
2000-08-01